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PMPB12UN
NXP 恩智浦 分立器件

DFN-MD N-CH 20V 7.9A

The is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in charging switch for portable devices, DC-to-DC converters and hard disk and computing power management applications.

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Very fast switching
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Small and leadless ultra thin SMD plastic package
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Exposed drain pad for excellent thermal conduction
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Tin-plated 100% solderable side pads for optical solder inspection
.
-55 to 150°C Junction temperature range
PMPB12UN中文资料参数规格
技术参数

漏源极电阻 0.014 Ω

极性 N-Channel

耗散功率 3.5 W

阈值电压 700 mV

漏源极电压Vds 20 V

连续漏极电流Ids 7.9A

工作温度Max 150 ℃

封装参数

引脚数 8

封装 SOT-1220

外形尺寸

封装 SOT-1220

其他

产品生命周期 Unknown

制造应用 Industrial, Computers & Computer Peripherals, Power Management, Portable Devices

符合标准

RoHS标准 RoHS Compliant

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

PMPB12UN引脚图与封装图
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