PMPB20EN
数据手册.pdf
NXP
恩智浦
分立器件
NXP PMPB20EN 晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V
The is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in charging switch for portable devices, DC-to-DC converters and hard disk and computing power management applications.
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- Very fast switching
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- Small and leadless ultra thin SMD plastic package
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- Exposed drain pad for excellent thermal conduction
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- Tin-plated 100% solderable side pads for optical solder inspection
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- -55 to 150°C Junction temperature range