PBSS4350D

NXP  PBSS4350D  单晶体管 双极, 通用, NPN, 50 V, 600 mW, 3 A, 200 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 60V

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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 50V

集电极连续输出电流ICCollector CurrentIC| 3A

截止频率fTTranstion FrequencyfT| 100MHz

直流电流增益hFEDC Current GainhFE| 200

管压降VCE（sat）Collector-Emitter Saturation Voltage| 90mV~290mV

耗散功率PcPower Dissipation| 750mW/0.75W

Description & Applications| NPN transistor FEATURES • High current capabilities • Low VCEsat . APPLICATIONS • Heavy duty battery powered equipment Automotive, Telecom and Audio/Video such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power. DESCRIPTION NPN low VCEsat transistor in a SC-74 plastic package.

描述与应用| NPN 特点 •高电流能力 •低VCESAT 。 应用 •重型电池供电设备（汽车， 电信与音频/视频）电机和照明等 司机 VCE监测的关键应用，如最新的低电源 电压IC应用 •所有电池驱动的设备，以节省电池电力。 说明 NPN低VCEsat  在SC-74塑料封装晶体管。