PBSS306NX,115
数据手册.pdf
NXP
恩智浦
分立器件
NXP PBSS306NX,115 单晶体管 双极, NPN, 100 V, 110 MHz, 600 mW, 4.5 A, 40 hFE
The is a 4.5A NPN breakthrough-in small signal BISS Transistor in a small and flat lead surface-mount plastic package. It offers collector pad for good heat transfer.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- PNP complement is PBSS306PX
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- 5G Marking code