PTFB192503FLV2R250XTMA1
数据手册.pdf
Infineon
英飞凌
主动器件
Trans RF MOSFET N-CH 65V 5Pin Case 34288-4/2 T/R
Summary of Features:
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- Broadband input and output matching
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- Enhanced for use in DPD error correction systems
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- Typical two-carrier WCDMA performance at 1990 MHz, 30 V
\- Average output power = 50 W
\- Linear Gain = 19 dB
- Efficiency = 28%
\- IMD = -35 dBc
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- Typical CW performance, 1990 MHz, 30 V
\- Output power at P1dB = 240 W
\- Efficiency = 55%
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- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
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- Capable of handling 10:1 VSWR @ 30 V, 240 W CW output power
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- Integrated ESD protection. Human Body Model, Class 2 minimum
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- Pb-free and RoHS compliant
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- Package: H-34288-4/2, earless