PD54003-E
数据手册.pdfRF功率晶体管， LDMOST塑料家族的N沟道增强模式，横向MOSFET的 RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
Amplifying and switching electronic signals fast and reliably can be done with this RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.