PD85004
数据手册.pdfMOSFET 晶体管,STMicroelectronics射频晶体管为 LDMOS,适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。### MOSFET 晶体管,STMicroelectronics
射频 MOSFET ,STMicroelectronics
射频晶体管为 LDMOS,适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。
得捷:
FET RF 40V 870MHZ
欧时:
### 射频 MOSFET 晶体管,STMicroelectronics射频晶体管为 LDMOS,适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。### MOSFET 晶体管,STMicroelectronics
艾睿:
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this PD85004 RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 6000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
安富利:
Trans MOSFET N-CH 40V 2A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans RF MOSFET N-CH 40V 2A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans RF MOSFET N-CH 40V 2A 4-Pin3+Tab SOT-89 T/R
Newark:
# STMICROELECTRONICS PD85004 RF FET Transistor, 40 V, 2 A, 6 W, SOT-89
儒卓力:
**HF-MOSFET 40V 2A 6W SOT-89 **
DeviceMart:
TRANS RF POWER LDMOST
Win Source:
FET RF 40V 870MHZ