P6SMB18CAT3G
数据手册.pdf
ON Semiconductor
安森美
分立器件
600W 齐纳 SMT 瞬态电压抑制器，P6SMB 系列（双向）ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。### 瞬态电压抑制器，On Semiconductor
The P6SMB series unidirectional Zener Transient Voltage Suppressor Diode designed to protect voltage sensitive components from high voltage and high energy transients. It has excellent clamping capability, high surge capability, low Zener impedance and fast response time.
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- 5.8 to 171V Working peak reverse voltage range
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- 600W @ 1ms Peak power
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- ESD rating of Class 3 >16kV per human body model
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- Maximum clamp voltage @ peak pulse current
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- <5µA above 10V Low leakage current
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- 6.8 to 200V Standard Zener breakdown voltage range
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- <1ns Response time
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- -65 to 150°C Operating temperature range
