PBSS2540E,115
数据手册.pdfNXP(恩智浦)
分立器件
NXP PBSS2540E,115 单晶体管 双极, NPN, 40 V, 450 MHz, 150 mW, 500 mA, 200 hFE
The is a 500mA NPN breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- PNP complement is PBS3540E
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- 1S Marking code