PBSS4032SPN
数据手册.pdf
NXP
恩智浦
分立器件
NXP PBSS4032SPN 双极晶体管阵列, NPN, PNP, 30 V, 2.3 W, 5.7 A, 300 hFE, SOIC
The is a NPN-PNP breakthrough-in small signal BISS Bipolar Transistor Array in a medium power surface-mount plastic package. It is suitable for DC-to-DC conversion, battery-driven devices and charging circuits. It utilizes required smaller printed-circuit board PCB area than for conventional transistors.
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- Low collector-emitter saturation voltage VCEsat
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- Optimized switching time
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- PBSS4032SN dual NPN complement
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- PBSS4032SP dual PNP complement