PBSS4032PZ
数据手册.pdf
NXP
恩智浦
分立器件
NXP PBSS4032PZ 单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -4.4 A, 350 hFE
The is a 4.4A PNP breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.
- .
- Low collector-emitter saturation voltage VCEsat
- .
- Optimized switching time
- .
- High collector current capability IC and ICM
- .
- High collector current gain hFE at high IC
- .
- High energy efficiency due to less heat generation
- .
- Smaller required printed-circuit board PCB area than for conventional transistors
- .
- AEC-Q101 qualified
- .
- NPN complement is PBSS4032NZ
- .
- PB4032PZ Marking code