PMV65XPEA

NXP  PMV65XPEA  晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V

The is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.

.

Very fast switching

.

890mW Enhanced power dissipation capability Ptot

.

2kV HBM ESD protection

.

AEC-Q101 qualified

.

-55 to 150°C Junction temperature range