PCA24S08AD,118

EEPROM Serial-I2C 8Kbit 1K x 8 3.3V 8Pin SO T/R

Overview

The PCA24S08A provides 8192 bits of serial Electrically Erasable and Programmable Read-Only Memory EEPROM organized as 1024 words of 8 bits each. Data bytes are received and transmitted via the serial I²C-bus.

Access permissions limiting reads or writes are set via the I²C-bus to isolate blocks of memory from improper access.

The PCA24S08A is intended to be pin compatible with standard 24C08 serial EEPROM devices except for pins 1, 2, and 3, which are address pins in the standard part. Other exceptions to the PCA24S08A serial EEPROM data sheet are noted in Section 6.6.

All bits are sent to or read from the device, most significant bit first, in a manner consistent with the 24C08 serial EEPROM. The bit fields in this document are correspondingly listed with the MSB on the left and the LSB on the right.

The EEPROM memory is broken up into 8 blocks of 1 kbit 128 bytes each. Within each block, the memory is physically organized in to 8 pages of 128 bits 16 bytes each. In addition to these 8 kbits, there are two more 128-bit pages that are used to store the access protection and ID information. There are a total of 8448 bits of EEPROM memory available in the PCA24S08A.

Access protection both read and write is organized on a block basis for block 1 through block 7 and on a page and a block basis for block 0. Protection information for these blocks and pages is stored in one of the additional pages of EEPROM memory that is addressed separately from the main data storage array. SeeSection 6.4 for more details.

The ID value is located in the ID page of the EEPROM, the second of the additional 16 byte pages.

Writes from the serial interface may include from one byte to 16 bytes at a time, depending on the protocol followed by the bus master. All page accesses must be properly aligned to the internal EEPROM page.

The EEPROM memory offers an endurance of 100,000 write cycles per byte, with 10 year data retention. Writes to the EEPROM take less than 5 ms to complete.

After manufacturing, all EEPROM bits will be set to a value of ‘1’.

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## Features

* Non-volatile storage of 8 kbits organized as 8 blocks of 128 bytes each

* I²C-bus interface logic

* Compatible with 24C08 serial EEPROM, and alternate source of Atmel AT24RF08C without the RF interface

* Write operation:

* Byte write mode

* 16-byte page write mode

* Read operation:

* Sequential read

* Random read

* Programmable access protection to limit reads and writes

* Lock/unlock function

* Write protect feature protecting the full memory array against write operations

* Self timed write cycle

* Internal power-on reset

* High reliability:

* Ten years non-volatile data retention time

* 100,000 write cycle endurance

* Low power CMOS technology

* Operating power supply voltage range of 2.5 V to 3.6 V

* 0 Hz to 400 kHz clock frequency

* ESD protection exceeds 2000 V HBM per JESD22-A114, 200 V MM per JESD22-A115 and 1000 V CDM per JESD22-C101

* Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA

* Packages offered: SO8, TSSOP8

## Features