OP232W
数据手册.pdfOPTEK TECHNOLOGY OP232W 红外发射器, 密闭, 50 °, TO-46, 100 mA, 2 V, 500 ns, 250 ns
The is a gallium aluminium arsenide GaAIAs Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a wide beam angle 50° between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors, while the wide beam angle provides relatively even illumination over a large area.
- .
- Focused and non-focused optical light pattern
- .
- Enhanced temperature range
- .
- Mechanically and spectrally matched to other OPTEK devices