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MMDT3946LP4-7

MMDT3946LP4-7

数据手册.pdf
Diodes(美台) 分立器件

双极晶体管 - 双极结型晶体管BJT BIPOLAR COMP.

Bipolar BJT Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 200mW Surface Mount DFN1310H4-6


得捷:
TRANS NPN/PNP 40V 0.2A 6DFN


贸泽:
双极晶体管 - 双极结型晶体管BJT BIPOLAR COMP.


艾睿:
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the npn and PNP MMDT3946LP4-7 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6@NPN|5@PNP V.


安富利:
Trans GP BJT NPN/PNP 40V 0.2A 6-Pin DFN T/R


Chip1Stop:
Trans GP BJT NPN/PNP 40V 0.2A 6-Pin DFN T/R


Verical:
Trans GP BJT NPN/PNP 40V 0.2A Automotive 6-Pin DFN T/R


Win Source:
TRANS NPN/PNP 40V 0.2A 6DFN


MMDT3946LP4-7中文资料参数规格
技术参数

频率 300 MHz

极性 NPN+PNP

耗散功率 0.2 W

击穿电压集电极-发射极 40 V

集电极最大允许电流 0.2A

最小电流放大倍数hFE 100 @10mA, 1V

额定功率Max 200 mW

工作温度Max 150 ℃

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 DFN-6

外形尺寸

长度 1.3 mm

宽度 1 mm

高度 0.35 mm

封装 DFN-6

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

MMDT3946LP4-7引脚图与封装图
暂无图片
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