MMDT4126-7-F

Trans GP BJT PNP 25V 0.2A 200mW Automotive 6Pin SOT-363 T/R

- 双极 BJT - 阵列 2 PNP（双） 25V 200mA 250MHz 200mW 表面贴装型 SOT-363

得捷:
TRANS 2PNP 25V 0.2A SOT363

艾睿:
Implement this PNP MMDT4126-7-F GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V.

Allied Electronics:
Trans GP BJT PNP 25V 0.2A 6Pin SOT363

安富利:
Trans GP BJT PNP 25V 0.2A 6-Pin SOT-363 T/R

Chip1Stop:
Trans GP BJT PNP 25V 0.2A 6-Pin SOT-363 T/R

Verical:
Trans GP BJT PNP 25V 0.2A 200mW Automotive 6-Pin SOT-363 T/R

儒卓力:
**PNP TRANSISTOR 0,2A 25V SOT363 **

Win Source:
TRANS 2PNP 25V 0.2A SOT363

DeviceMart:
TRANSISTOR DUAL PNP 25V SOT363