MRF085HR5

晶体管, 射频FET, LDMOS, 133 VDC, 235 W, 1.8 MHz, 1.215 GHz, NI-650H

Overview

The MRF085H high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications and sub-GHz aerospace and defense and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 1215 MHz.

##### Typical Applications

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## Features

* Unmatched input and output allowing wide frequency range utilization

* Device can be used single-ended or in a push-pull configuration

* Characterized from 30 to 50 V for ease of use

* Suitable for linear application

* Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation

* RoHS compliant

## Features RF Performance Tables

### Typical Performance

VDD = 50 Vdc

.

*Frequency

MHz

.

* | **Signal Type** | **Pout

W

.

* | **Gps

dB

.

* | **ηD

%

.

*

\---|---|---|---|---

30-520 1,2| CW| 50 CW| 14.0| 40.0

520 3| CW| 85 CW| 25.6| 73.3

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

520 3| CW| > 65:1

at all Phase Angles| 0.56

3 dB Overdrive| 50| No Device Degradation

1\\. Measured in 30-520 MHz broadband reference circuit.

2\\. The values shown are the minimum measured performance numbers across the indicated frequency range.

3\\. Measured in 520 MHz narrowband test circuit.