MAT02EH
数据手册.pdf
ADI
亚德诺
主动器件
低噪声，匹配双单片晶体管 Low Noise, Matched Dual Monolithic Transistor
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain hFE of the MAT02 is maintained over a wide range of collector current.
FEATURES
Low Offset Voltage: 50 V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
High Gain hFE:
500 min at IC= 1 mA
300 min at IC= 1 A
Excellent Log Conformance: rBE 0.3
Low Offset Voltage Drift: 0.1 V/C max
Improved Direct Replacement for LM194/394