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M45PE10-VMP6G

M45PE10-VMP6G

数据手册.pdf
ST Microelectronics 意法半导体 电子元器件分类

1兆位,低电压,页面可擦除串行闪存与字节变性和50兆赫的SPI总线接口 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description

The M45PE10 is a 1 Mbit 128 Kb x 8 bit Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

Features

■ SPI bus compatible serial interface

■ 50 MHz clock rate maximum

■ 2.7 V to 3.6 V single supply voltage

■ 1 Mbit of Page-Erasable Flash memory

■ Page size: 256 bytes

– Page Write in 11ms typical

– Page Program in 0.8 ms typical

– Page Erase in 10 ms typical

■ Sector Erase 512 Kbit

■ Hardware Write protection of the bottom sector 64 Kbytes

■ Electronic signature

– JEDEC standard two-byte signature 4011h

■ Deep Power-down mode 1 µA typical

■ More than 100 000 Write cycles

■ More than 20 years’ data retention

■ Packages

– ECOPACK® RoHS compliant

M45PE10-VMP6G中文资料参数规格
封装参数

引脚数 8

封装 HVSON

外形尺寸

封装 HVSON

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

M45PE10-VMP6G引脚图与封装图
暂无图片
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