MAGX-000912-125L00

氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 960-1215兆赫， 128μs脉冲， 10 ％占空比 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty

RF Mosfet HEMT 50V 100mA 960MHz ~ 1.215GHz 18.9dB 125W

得捷:
TRANSISTOR GAN 125W 960-1215MHZ

Chip1Stop:
Trans JFET 7.1A GaN HEMT 3-Pin

Verical:
Trans JFET 7.1A GaN HEMT 3-Pin