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MMZ25332B4T1

MMZ25332B4T1

数据手册.pdf
NXP(恩智浦) 主动器件

Amplifier, 1.5 to 2.7GHz, 33 dBm, 26.5dB, 3 to 5V, 4mm QFN

Overview

The MMZ25332B4 is a versatile 2-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package which allows for maximum via hole pattern. The MMZ25332B4 offers exceptional reliability, ruggedness and ESD performance.

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## Features

* Frequency: 1500-2700 MHz

* P1dB: 33 dBm @ 2500 MHz

* Power Gain: 26.5 dB @ 2500 MHz

* OIP3: 48 dBm @ 2500 MHz

* EVM ≤ 3% @ 23.5 dBm Pout, WLAN 802.11g

* Active Bias Control adjustable externally

* Power Down Control via VBIAS

* Single 3 to 5 Volt Supply

* Single-ended Power Detector

* Cost-effective 24-Pin, 4 mm QFN Surface Mount Plastic Package

* RoHS Compliant

## Features RF Performance Table

### Typical Performance

VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
.
*Frequency** | **Pout
dBm
.
* | **Gps
dB
.
* | **ACPR
dBc
.
* | **ICC
mA
.
* | **Test Signal**

\---|---|---|---|---|---

2140 MHz| 21.7| 26.5| –48| 441| W-CDMA

2350 MHz| 21.5| 26.6| –48| 446| LTE

2600 MHz| 22.5| 26.7| –48| 453| LTE

MMZ25332B4T1中文资料参数规格
技术参数

频率 1.5GHz ~ 2.7GHz

供电电流 400 mA

输出功率 33 dBm

增益 27 dB

测试频率 2.7 GHz

工作温度Max 175 ℃

电源电压 5 V

封装参数

安装方式 Surface Mount

引脚数 24

封装 QFN-24

外形尺寸

封装 QFN-24

物理参数

工作温度 -65℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

MMZ25332B4T1引脚图与封装图
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