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MBM29LV160BE90TN

Fujitsu 富士通 主动器件

FLASH MEMORY CMOS 16M 2M × 8/1M × 16 BIT

■ GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP I, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

   Minimizes system level power requirements

• Compatible with JEDEC-standard commands

   Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

   48-pin TSOP I Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type

   48-pin CSOP Package suffix: PCV

   48-ball FBGA Package suffix: PBT

• Minimum 100,000 program/erase cycles

• High performance

   70 ns maximum access time

• Sector erase architecture

   One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode

   One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode

   Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

   T = Top sector

   B = Bottom sector

• Embedded EraseTM Algorithms

   Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

   Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output RY/BY

   Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

   When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

   Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector protection

   Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector Protection command

• Fast Programming Function by Extended command

• Temporary sector unprotection

   Temporary sector unprotection via the RESET pin

• In accordance with CFI Common Flash Memory Interface

MBM29LV160BE90TN中文资料参数规格
技术参数

电源电压 3 V

封装参数

封装 TSOP1

外形尺寸

封装 TSOP1

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

MBM29LV160BE90TN引脚图与封装图
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MBM29LV160BE90TN Fujitsu 富士通 FLASH MEMORY CMOS 16M 2M × 8/1M × 16 BIT 搜索库存
替代型号MBM29LV160BE90TN
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MBM29LV160BE90TN

品牌: Fujitsu 富士通

封装: TSOP1

当前型号

FLASH MEMORY CMOS 16M 2M × 8/1M × 16 BIT

当前型号

型号: AM29LV160DB-90EC

品牌: 超微半导体

封装: TSOP1

功能相似

NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 90ns 48Pin TSOP

MBM29LV160BE90TN和AM29LV160DB-90EC的区别

型号: AM29LV160BB-90EI

品牌: 超微半导体

封装:

功能相似

NOR Flash Parallel 3.3V 16M-bit 2M x 8/1M x 16 90ns 48Pin TSOP

MBM29LV160BE90TN和AM29LV160BB-90EI的区别

型号: AM29LV160DB-90EI

品牌: 超微半导体

封装:

功能相似

16 Megabit 2M x 8Bit/1M x 16Bit CMOS 3V-only Boot Sector Flash Memory

MBM29LV160BE90TN和AM29LV160DB-90EI的区别