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M28F201-150XN6R

数据手册.pdf
ST Microelectronics 意法半导体 主动器件

2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION

The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

■ 5V ± 10% SUPPLY VOLTAGE

■ 12V PROGRAMMING VOLTAGE

■ FAST ACCESS TIME: 70ns

■ BYTE PROGRAMMING TIME: 10µs typical

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ LOW POWER CONSUMPTION

   – Active Current: 15mAtypical

   – Stand-by Current: 10µA typical

■ 10,000 PROGRAM/ERASE CYCLES

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ OTP COMPATIBLE PACKAGES and PINOUTS

■ ELECTRONIC SIGNATURE

   – ManufacturerCode: 20h

   – Device Code: F4h

M28F201-150XN6R中文资料参数规格
封装参数

封装 TSOP1-R

外形尺寸

封装 TSOP1-R

其他

产品生命周期 Unknown

M28F201-150XN6R引脚图与封装图
暂无图片
在线购买M28F201-150XN6R
型号 制造商 描述 购买
M28F201-150XN6R ST Microelectronics 意法半导体 2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY 搜索库存
替代型号M28F201-150XN6R
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: M28F201-150XN6R

品牌: ST Microelectronics 意法半导体

封装: TSOP1-R

当前型号

2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY

当前型号

型号: M28F201-150XN1R

品牌: 意法半导体

封装: TSOP1-R

功能相似

2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY

M28F201-150XN6R和M28F201-150XN1R的区别

型号: M28F201-150XN3R

品牌: 意法半导体

封装: TSOP1-R

功能相似

2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY

M28F201-150XN6R和M28F201-150XN3R的区别

型号: M28F201-150N1R

品牌: 意法半导体

封装:

功能相似

2 Mb的256K ×8 ,芯片擦除闪存 2 Mb 256K x 8, Chip Erase FLASH MEMORY

M28F201-150XN6R和M28F201-150N1R的区别