M29F010B70P1

电可擦除可编程只读存储器 1M 128Kx8 70ns

SUMMARY DESCRIPTION

The M29F010B is a 1 Mbit 128Kb x8 non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ACCESS TIME: 45ns

■PROGRAMMING TIME

–8µs per Byte typical

■8 UNIFORM 16 Kbytes MEMORY BLOCKS

■PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■LOW POWER CONSUMPTION

– Standby and Automatic Standby

■100,000 PROGRAM/ERASE CYCLES per BLOCK

■20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h