MA4E2502H-1246

SURMOUNTTM低，中，高垒硅肖特基二极管 SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications

The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky

Devices fabricated with the patented Heterolithic Microwave Integrated Circuit HMIC process.

HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, micro strip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Features

•  Extremely Low Parasitic Capitance and Inductance

•  Surface Mountable in Microwavable Circuits, No Wirebonds Required

•  Rugged HMIC Construction with Polyimide Scratch Protection

•  Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16

hours

•  Lower Susceptibility to ESD Damage