MMRF1314HSR5
数据手册.pdfNXP(恩智浦)
分立器件
RF Power Transistor,1200 to 1400MHz, 1000W, Typ Gain in dB is 15.5 @ 1200MHz, 52V, LDMOS, SOT1829
RF Mosfet LDMOS Dual 50V 500mA 1.4GHz 17.7dB 1000W NI-1230-4S
得捷:
TRANS RF FET 1.4GHZ 1000W 52V
艾睿:
RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
安富利:
Trans RF FET N-CH 105V 4-Pin NI-1230H T/R
RfMW:
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 15.5 @ 1200 MHz, 52 V, LDMOS, SOT1829