MHT1003NR3

RF Power Transistor,2450 to 2450MHz, 263W, Typ Gain in dB is 15.9 @ 2450MHz, 32V, LDMOS, SOT1823

Overview

The 250 W CW RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

For additional information contact ® Semiconductor.

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## Features

* Characterized with series equivalent large-signal impedance parameters and common source S-parameters

* Internally pre-matched for ease of use

* Qualified for operation at 32 Vdc

* Integrated ESD protection

* 150°C case operating temperature

* 225°C die temperature capability

* RoHS Compliant

**Typical Applications**

* Consumer cooking

* Commercial cooking

## Features RF Performance Tables

### Typical Performance

VDD = 32 Vdc, IDQ = 25 mA

.

*Frequency

MHz

.

* | **Signal Type** | **Gps

dB

.

* | **PAE

%

.

* | **Pout

W

.

*

\---|---|---|---|---

2400| CW| 15.0| 57.0| 250

2450| 15.9| 59.0| 250

2500| 14.9| 55.0| 250

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

2450| CW| > 10:1

at all Phase

Angles| 14

3 dB

Overdrive| 32| No

Device

Degradation