MRF8P20160HR3

RF Power Transistor,1880 to 2025MHz, 107W, Typ Gain in dB is 16.5 @ 1920MHz, 28V, LDMOS, SOT1827

Overview

The and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* NI-780-4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.

NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.

## Features RF Performance Tables

### 1880-1920 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1880 MHz| 16.5| 44.8| 7.0| –29.8

1900 MHz| 16.6| 45.3| 6.9| –30.1

1920 MHz| 16.5| 45.8| 6.9| –30.6

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power 3 dB Input Overdrive from Rated Pout

* Typical Pout @ 3 dB Compression Point ≃ 160 Watts CW

### 2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2025 MHz| 15.3| 44.0| 6.8| –30.0