MMRF1312HSR5
数据手册.pdfNXP(恩智浦)
主动器件
RF Power Transistor,900 to 1215MHz, 1000W, Typ Gain in dB is 17.3 @ 960MHz, 52V, LDMOS, SOT1829
RF Mosfet LDMOS Dual 50V 100mA 1.034GHz 19.6dB 1000W NI-1230-4S
得捷:
TRANS 960-1215MHZ 1000W PEAK 50V
艾睿:
RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
RfMW:
RF Power Transistor,900 to 1215 MHz, 1000 W, Typ Gain in dB is 17.3 @ 960 MHz, 52 V, LDMOS, SOT1829