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MRF8P20100HSR3

MRF8P20100HSR3

数据手册.pdf
NXP(恩智浦) 分立器件

RF Power Transistor,1805 to 2025MHz, 78W, Typ Gain in dB is 16 @ 2025MHz, 28V, LDMOS, SOT1826

Overview

The MRF8P20100HR3 and are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.

## Features RF Performance Tables

### 2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2025 MHz| 16.0| 44.3| 7.8| –33.5

### 1880-1920 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

1880 MHz| 16.2| 43.5| 7.6| –30.8

1900 MHz| 16.1| 43.4| 7.6| –32.6

1920 MHz| 15.8| 42.9| 7.6| –34.6

### 1800 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **SR1

@ 400 kHz

dBc
.
* | **SR2

@ 600 kHz

dBc
.
* | **EVM
% rms
.
*

\---|---|---|---|---|---

1805 MHz| 17.1| 43.8| –58.4| –74.4| 3.0

1840 MHz| 17.3| 42.4| –60.0| –75.5| 2.6

1880 MHz| 17.1| 41.7| –60.5| –75.3| 2.4

MRF8P20100HSR3中文资料参数规格
技术参数

频率 2.03 GHz

无卤素状态 Halogen Free

输出功率 20 W

增益 16 dB

测试电流 400 mA

工作温度Max 225 ℃

工作温度Min -65 ℃

额定电压 65 V

电源电压 28 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 NI-780HS-4

外形尺寸

封装 NI-780HS-4

物理参数

重量 6468.8 mg

工作温度 -65℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

MRF8P20100HSR3引脚图与封装图
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