MRF8S7235NR3

RF Power Transistor,728 to 768MHz, 260W, Typ Gain in dB is 20 @ 728MHz, 28V, LDMOS, SOT1823

Overview

The is designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

## Features RF Performance Table

### 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency

MHz

.

* | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

728| 20.0| 36.1| 6.3| –38.1

748| 20.2| 36.0| 6.4| –39.0

768| 20.1| 35.9| 6.4| –38.7

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness

* Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW