MRF8S9260HSR3

Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960MHz, 75W Avg., 28V

Overview

The MRF8S9260HR3 and are designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.

## Features RF Performance Table

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

920 MHz| 18.8| 36.0| 6.3| –39.5

940 MHz| 18.7| 37.0| 6.2| –38.6

960 MHz| 18.6| 38.5| 5.9| –37.1

* Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness

* Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW