MRF8P29300HR6
数据手册.pdfNXP(恩智浦)
分立器件
RF Power Transistor,2700 to 2900MHz, 320W, Typ Gain in dB is 13.3 @ 2900MHz, 30V, LDMOS, SOT1787
RF Mosfet LDMOS Dual 30V 100mA 2.9GHz 13.3dB 320W NI-1230
得捷:
FET RF 2CH 65V 2.9GHZ NI1230
艾睿:
Trans RF MOSFET N-CH 65V 4-Pin T/R
安富利:
Trans MOSFET N-CH 65V 4-Pin NI-1230 T/R
RfMW:
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1787
Win Source:
FET RF 2CH 65V 2.9GHZ NI1230 / RF Mosfet LDMOS Dual 30 V 100 mA 2.9GHz 13.3dB 320W NI-1230