MID75-12A3

IGBT 模块，IXYS### IGBT 分立元件和模块，IXYS绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 模块，IXYS

得捷:
IGBT MODULE 1200V 90A 370W Y4M5

欧时:
IXYS MID75-12A3 N通道 IGBT 模块, 90 A, Vce=1200 V, 7引脚 Y4 M5封装

贸泽:
IGBT Modules 75 Amps 1200V

e络盟:
晶体管, IGBT阵列&模块, N沟道, 90 A, 2.2 V, 190 W, 1.2 kV, Y4-M5

艾睿:
The MID75-12A3 infineon IGBT module from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 370000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.

TME:
Brake chopper; Urmax:1.2kV; Ic:60A; P:370W; Ifsm:400A; Y4-M5

Verical:
Trans IGBT Module N-CH 1200V 90A 370000mW 7-Pin Y4-M5

Newark:
# IXYS SEMICONDUCTOR  MID75-12A3  IGBT, MODULE, N-CH, 1.2KV, 90A, Y4-M5 New