MII150-12A4

Trans IGBT Module N-CH 1200V 180A 760000mW 7Pin Y3-DCB

IGBT 模块 NPT 半桥 底座安装 Y3-DCB

得捷:
IGBT MOD 1200V 180A 760W Y3DCB

艾睿:
The MII150-12A4 infineon IGBT module from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 760000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a dual configuration.