MRF6V2300NBR1
数据手册.pdfNXP MRF6V2300NBR1 RF FET Transistor, 110V, 2.5mA, 300W, 10MHz, 600MHz, TO-272
Overview
The MRF6V2300NR1 and are designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
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## Features
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz
Power Gain: 25.5 dB
Drain Efficiency: 68%
* Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power
* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
**NOTE: PARTS ARE SINGLE–ENDED**
## Features
**NOTE: PARTS ARE SINGLE–ENDED**