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MT28F128J3RG-12ET

MT28F128J3RG-12ET

数据手册.pdf
Micron 镁光 电子元器件分类

NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable Flash, programmable memory containing 134,217,728 bits organized as 16,777,218 bytes 8 bits or 8,388,608 words 16 bits. This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes 8 bits or 4,194,304 words 16 bits. This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes 8 bits or 2,097,152 words 16 bits. This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface CFI that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

• x8/x16 organization

• One hundred twenty-eight 128KB erase blocks 128Mb

   Sixty-four 128KB erase blocks 64Mb

   Thirty-two 128KB erase blocks 32Mb

• VCC, VCCQ, and VPEN voltages:

   2.7V to 3.6V VCC operation

   2.7V to 3.6V or 4.5V to 5.5V
.
VCCQ operation

   2.7V to 3.6V, or 5V VPEN application programming

• Interface Asynchronous Page Mode Reads:

   150ns/25ns read access time 128Mb

   120ns/25ns read access time 64Mb

   110ns/25ns read access time 32Mb

• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

• Security OTP block feature Permanent block locking Contact factory for availability

• Industry-standard pinout

• Inputs and outputs are fully TTL-compatible

• Common Flash Interface CFI and Scalable Command Set

• Automatic write and erase algorithm

• 4.7µs-per-byte effective programming time using write buffer

• 128-bit protection register

   64-bit unique device identifier

   64-bit user-programmable OTP cells

• 100,000 ERASE cycles per block

• Automatic suspend options:

   Block Erase Suspend-to-Read

   Block Erase Suspend-to-Program

   Program Suspend-to-Read

MT28F128J3RG-12ET中文资料参数规格
封装参数

封装 TSOP1

外形尺寸

封装 TSOP1

其他

产品生命周期 Unknown

符合标准

RoHS标准 Non-Compliant

MT28F128J3RG-12ET引脚图与封装图
暂无图片
在线购买MT28F128J3RG-12ET
型号 制造商 描述 购买
MT28F128J3RG-12ET Micron 镁光 NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray 搜索库存
替代型号MT28F128J3RG-12ET
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MT28F128J3RG-12ET

品牌: Micron 镁光

封装: TSOP1

当前型号

NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray

当前型号

型号: MT28F128J3RG-12

品牌: 镁光

封装:

功能相似

NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 150ns 56Pin TSOP-I Tray

MT28F128J3RG-12ET和MT28F128J3RG-12的区别

型号: TE28F128J3C-120

品牌: 英特尔

封装:

功能相似

Intel StrataFlash® Memory

MT28F128J3RG-12ET和TE28F128J3C-120的区别

型号: JS28F128J3C120

品牌: 英特尔

封装:

功能相似

Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 120ns 56Pin TSOP

MT28F128J3RG-12ET和JS28F128J3C120的区别