MTM231230L

硅P沟道MOSFET开关 Silicon P-channel MOSFET For Switching

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 10V 最大漏极电流IdDrain Current| -3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.04Ω @-1A,-4V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4--1.3V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| Features Low voltage drive 1.8 V, 2.5 V, 4 V Realization of low on-resistance, using extremely fine process Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package 描述与应用| 低电压驱动（1.8 V，2.5 V，4 V） 实现低导通电阻，用极其精细的过程 集小型化，减少元件数量。 环保无卤素封装