MMJT9435T1
数据手册.pdf双极功率晶体管PNP硅 Bipolar Power Transistors PNP Silicon
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -45V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −30V 集电极连续输出电流ICCollector CurrentIC| -3A 截止频率fTTranstion FrequencyfT| 110MHz 直流电流增益hFEDC Current GainhFE| 220 管压降VCE（sat）Collector-Emitter SaturationVoltage| −550mV/-0.55V 耗散功率PcPoWer Dissipation| 1.56W Description & Applications| Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • High DC Current Gain • Low Collector −Emitter Saturation Voltage • SOT−223 Surface Mount Packaging 描述与应用| 双极功率PNP硅 特点 •无铅包可用 •高直流电流增益 •低集电极 - 发射极饱和电压 •SOT-223表面贴装包装