MT47H128M16RT-3:C

Micron(镁光) 主动器件

DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 9 X 12.5MM, ROHS COMPLIANT, FBGA-84

SDRAM - DDR2 Memory IC 2Gb 128M x 16 Parallel 333MHz 450ps 84-FBGA 9x12.5

得捷:
IC DRAM 2GBIT PARALLEL 84FBGA

艾睿:
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray

Chip1Stop:
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray

Win Source:
IC SDRAM 2GBIT 333MHZ 84FBGA

MT47H128M16RT-3:C中文资料参数规格

技术参数

工作电压 1.80 V

位数 16

存取时间Max 0.45 ns

工作温度Max 70 ℃

工作温度Min 0 ℃

电源电压 1.7V ~ 1.9V

封装参数

安装方式 Surface Mount

引脚数 84

封装 FBGA-84

外形尺寸

封装 FBGA-84

物理参数

工作温度 0℃ ~ 85℃

其他

产品生命周期 Unknown

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

MT47H128M16RT-3:C引脚图与封装图

暂无图片

在线购买MT47H128M16RT-3:C

型号	制造商	描述	购买
MT47H128M16RT-3:C	Micron 镁光	DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 9 X 12.5MM, ROHS COMPLIANT, FBGA-84	搜索库存

替代型号MT47H128M16RT-3:C

型号/品牌/封装	代替类型	描述	替代型号对比
型号： MT47H128M16RT-3:C 品牌： Micron 镁光封装： FBGA	当前型号	DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 9 X 12.5MM, ROHS COMPLIANT, FBGA-84	当前型号
型号： MT47H128M16RT-25EIT:C 品牌：镁光封装： FBGA	完全替代	DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5MM, ROHS COMPLIANT, FBGA-84	MT47H128M16RT-3:C和MT47H128M16RT-25EIT:C的区别
型号： MT47H128M16RT-25E:C 品牌：镁光封装： FBGA 84Pin	类似代替	MICRON MT47H128M16RT-25E:C 芯片, 存储器, SDRAM, DDR2. 2GB, 84FBGA	MT47H128M16RT-3:C和MT47H128M16RT-25E:C的区别
型号： MT47H128M16HG-3IT:A 品牌：镁光封装： FBGA	类似代替	DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 11.50 X 14MM, ROHS COMPLIANT, FBGA-84	MT47H128M16RT-3:C和MT47H128M16HG-3IT:A的区别