MSB709-RT1G
数据手册.pdfPNP通用放大器晶体管表面贴装 PNP General Purpose Amplifier Transistor Surface Mount
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -60V
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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −45V
集电极连续输出电流ICCollector CurrentIC| −100mA/-0.1A
截止频率fTTranstion FrequencyfT|
直流电流增益hFEDC Current GainhFE| 210~340
管压降VCE(sat)Collector-Emitter SaturationVoltage| −500mV/-0.5V
耗散功率PcPoWer Dissipation| 200mW/0.2W
Description & Applications| PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available
描述与应用| PNP硅通用放大器 特点 无铅包装是可用