MSD1328-RT1G
数据手册.pdf双极晶体管 - 双极结型晶体管BJT 500mA 25V NPN
- 双极 BJT - 单 NPN 20 V 500 mA - 200 mW 表面贴装型 SC-59
得捷:
TRANS NPN 20V 500MA SC59
贸泽:
双极晶体管 - 双极结型晶体管BJT 500mA 25V NPN
艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MSD1328-RT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 12 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 12 V.
安富利:
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R
Chip1Stop:
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R