MUN5233T1
数据手册.pdfNPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTORS
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 4.7KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 80-200 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.3W/300mW Description & Applications| Features NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. • Pb−Free Packages are Available 描述与应用| 特性 NPN硅表面贴装 具有单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •SC-70/SOT-323包装可以使用波或回流焊接。 修改后的鸥翅引线过程中吸收热应力 除焊接的模具损坏的可能性。 •可于8 mm压纹带和卷轴。使用设备号编排7 inch/3000的单位卷轴。 •无铅包可用