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MTD3302T4
ON Semiconductor 安森美 分立器件

DPAK N-CH 30V 30A

Power MOSFET 18 Amps, 30 Volts

N−Channel DPAK

This Power MOSFET is capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Characterized Over a Wide Range of Power Ratings

• Ultralow RDSon Provides Higher Efficiency and Extends Battery Life in Portable Applications

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

MTD3302T4中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 30 V

连续漏极电流Ids 30A

封装参数

安装方式 Surface Mount

封装 DPAK

外形尺寸

封装 DPAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

MTD3302T4引脚图与封装图
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