MUN2215T1
数据手册.pdfNPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTOR
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 电阻比R1/R2 Resistance Ratio| 直流电流增益hFE DC Current GainhFE| 160-350 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.23W/230mW Description & Applications| Features •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Moisture Sensitivity Level: 1 •ESD Rating - Human Body Model: Class 1 - Machine Model: Class B •The SC-59 Package can be Soldered Using Wave or Reflow •The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb-Free Packages are Available 描述与应用| 特性 •简化电路设计 •缩小板级空间 •减少元件数量 •湿度敏感度等级：1 •ESD额定值 - 人体模型：第1类 - 机器型号：B类 •SC-59封装，可以使用波或回流焊接 •改进的鸥翼引线在焊接热应力吸收消除模具损坏的可能性 •无铅包可用