MJD31CT4-A

MJD31C 系列 NPN 100 V 3A 表面贴装 低电压 功率晶体管 - TO-252

- 双极 BJT - 单 NPN 100 V 3 A - 15 W 表面贴装型 DPAK

得捷:
TRANS NPN 100V 3A DPAK

立创商城:
NPN 100V 3A

e络盟:
单晶体管 双极, NPN, 100 V, 15 W, 3 A, 10 hFE

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MJD31CT4-A GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 100V 3A 3-Pin2+Tab TO-252 T/R

富昌:
MJD31CT4-A Series 100 V 3 A 15 W NPN Low Voltage Power Transistor - TO-252-3

Chip1Stop:
Trans GP BJT NPN 100V 3A Automotive 3-Pin2+Tab TO-252 T/R

Verical:
Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  MJD31CT4-A  Bipolar BJT Single Transistor, NPN, 100 V, 15 W, 3 A, 50 hFE

DeviceMart:
TRANSISTOR NPN 100V 3A DPAK