MRF21010LSR1

射频金属氧化物半导体场效应RF MOSFET晶体管 10W 28V 2.1 GHZ LDMOS

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,

   5 MHz Offset/4.096 MHz BW, 15 DTCH

   Output Power — 2.1 Watts

   Power Gain — 13.5 dB

   Efficiency — 21%

• Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power

Features

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.