MMBTH10
数据手册.pdfFAIRCHILD SEMICONDUCTOR MMBTH10 晶体管 双极-射频, NPN, 25 V, 650 MHz, 225 mW, 50 mA, 60 hFE
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 30V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 25V 集电极连续输出电流ICCollector CurrentIC| 50mA 截止频率fTTranstion FrequencyfT| 650Mhz 直流电流增益hFEDC Current GainhFE| 60 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 300mW/0.3W Description & Applications| NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. 描述与应用| NPN RF 这个装置是专为使用低噪音UHF/ VHF放大器， 与集电极电流在100μA到20 mA范围内共同 发射器或共同经营的基本模式，并在低频 漂移，高输出UHF振荡器