MMBT5551
数据手册.pdfFAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 180V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 160V 集电极连续输出电流ICCollector CurrentIC| 600mA/0.6A 截止频率fTTranstion FrequencyfT| 100Mhz~300Mhz 直流电流增益hFEDC Current GainhFE| 30~250 管压降VCE(sat)Collector-Emitter Saturation Voltage| 150mV~250mV 耗散功率PcPower Dissipation| 350mW/0.35W Description & Applications| • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 Test condition : IC = 10mA, VCE = 5.0V 描述与应用| 这个装置是专为通用高电压放大器和气体放电显示驱动程序。 •后缀“-C”指中心集电极2N5551(1集电极发射23。基地) •后缀“-Y”表示HFE180〜2402N5551(测试条件:IC=10mA时,VCE= 5.0V)