MMBZ6V8AL

NXP  MMBZ6V8AL  静电保护装置, TVS, 9.6 V, TO-236AB, 3 引脚, 900 mV, 290 mW

The is a low capacitance unidirectional double ESD Protection Diode in a common anode configuration. The device is designed for ESD and transient overvoltage protection of up to two signal lines.

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Unidirectional ESD protection of two lines

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ESD protection up to 30kV contact discharge

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Bidirectional ESD protection of one line

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IEC 61000-4-2, level 4 ESD

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* 40W Rated peak pulse power PPPM

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5nA Ultra low leakage current IRM